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Effect of intermetallic formation on electromigration reliability of TSV-microbump joints in 3D interconnect

By: Seung-Hyun Chae; Yiwei Wang; Ho, P.S.; Im, J.; Tengfei Jiang; Bonifield, T.; Steinmann, P.; Mawatari, K.; Takahashi, Y.; Dunne, R.;

2012 / IEEE / 978-1-4673-1965-2

Description

This item was taken from the IEEE Conference ' Effect of intermetallic formation on electromigration reliability of TSV-microbump joints in 3D interconnect ' In this study, electromigration (EM) reliability of TSV-microbump (�-bump) joints was investigated. Sn-based �-bumps with three different schemes of metallization were tested under current stressing at elevated temperatures. EM-stressed �-bumps, together with thermal anneal-only �-bumps and as-received controls, were cross-sectioned and characterized using scanning electron microscope (SEM), energy dispersed x-ray (EDX) and focused ion beam (FIB). Intermetallic compound (IMC) growth kinetics under EM for the three types of metallization were obtained, and compared with those subjected to thermal annealing only. Results showed good EM performance of the TSV �-bump joints, indicating that IMC formation plays an important role in improving the EM reliability of �-bump joints. However, non-EM related voids were observed in the �-bumps, and the voiding mechanisms were discussed.