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Mechanisms of ambient dependent mobility degradation in the graphene MOSFETs on SiO2 substrate

By: Lee, Y.G.; Kang, C.G.; Lee, B.H.; Kim, M.W.; Park, E.J.; Jung, U.J.; Kim, J.J.; Hwang, H.J.; Kim, Y.H.; Cho, C.;

2012 / IEEE / 978-1-4673-0997-4

Description

This item was taken from the IEEE Conference ' Mechanisms of ambient dependent mobility degradation in the graphene MOSFETs on SiO2 substrate ' Two different mechanisms affecting the device instability and mobility degradation at graphene MOSFET on SiO2 substrate and their time constant, 40�sec and < 370�sec, have been identified. Oxygen/H2O reaction at the surface of graphene was identified as a major source of device hysteresis causing mobility degradation and device instability.