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Experimental analysis of DC and noise parameter degradation in n-channel reduced surface field (RESURF) LDMOS transistors
By: Amey, B.L.; Hou, F.; Srinivasan, P.; Pinghai Hao; Pendharkar, S.; Xu Cheng; Celik-Butler, Z.; Mahmud, M.I.; Weixiao Huang;
2012 / IEEE / 978-1-4577-1597-6
This item was taken from the IEEE Conference ' Experimental analysis of DC and noise parameter degradation in n-channel reduced surface field (RESURF) LDMOS transistors ' 1/� noise analysis is implemented as a quantitative measure for the dielectric / silicon interface related reliability and degradation in RESURF lateral double-diffused MOS transistors. The effect of DC stress on 1/� noise performance as well as on the location of stress induced degradation have been investigated with respect to stressing time in differently processed low and medium voltage LDMOS. The distribution of traps has been extracted spatially into the oxide and as a function of band-gap energy. The effect of LDMOS drift length to noise degradation has been studied.
Stress Induced Degradation
Semiconductor Device Measurement
Dielectric/silicon Interface Related Reliability
N-channel Reduced Surface Field
Noise Parameter Degradation
Ldmos Drift Length
Resurf Lateral Double-diffused Mos Transistors