Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Experimental analysis of DC and noise parameter degradation in n-channel reduced surface field (RESURF) LDMOS transistors

By: Amey, B.L.; Hou, F.; Srinivasan, P.; Pinghai Hao; Pendharkar, S.; Xu Cheng; Celik-Butler, Z.; Mahmud, M.I.; Weixiao Huang;

2012 / IEEE / 978-1-4577-1597-6

Description

This item was taken from the IEEE Conference ' Experimental analysis of DC and noise parameter degradation in n-channel reduced surface field (RESURF) LDMOS transistors ' 1/� noise analysis is implemented as a quantitative measure for the dielectric / silicon interface related reliability and degradation in RESURF lateral double-diffused MOS transistors. The effect of DC stress on 1/� noise performance as well as on the location of stress induced degradation have been investigated with respect to stressing time in differently processed low and medium voltage LDMOS. The distribution of traps has been extracted spatially into the oxide and as a function of band-gap energy. The effect of LDMOS drift length to noise degradation has been studied.