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Upper Limit of Two-Dimensional Hole Gas Mobility in Ge/SiGe Heterostructures
By: Itoh, K.M.; Shiraki, Y.; Sawano, K.; Hoshi, Y.; Tanaka, T.;
2012 / IEEE / 978-1-4577-1865-6
This item was taken from the IEEE Conference ' Upper Limit of Two-Dimensional Hole Gas Mobility in Ge/SiGe Heterostructures ' Here we report experimental and theoretical investigations of two-dimensional hole gas (2DHG) mobility in Ge/SiGe heterostructures and deduce the theoretical limit of 2DHG mobility as a function of the strain in Ge. 2DHG mobility was experimentally obtained by mobility spectrum analysis in the temperature range of 5-290 K. Based on the subband structure described with use of a six-band kp method 2DHG mobility was calculated. Each contribution of scattering mechanism was determined from the Dingle ratio obtained from Shubnikov-de Haas oscillations. From the comparison between the experimental and calculated 2DHG mobility, we show that the interface roughness scattering is dominant scattering mechanism below 200K and 2DHG mobility can be increased to more than 5000 cm2/Vs at room temperature if the interface roughness is removed and the 2DHG concentration is controlled appropriately.
Two-dimensional Hole Gas Mobility
Temperature 293 K To 298 K
Two Dimensional Hole Gas
Field Effect Transistors