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Drive-by-Microwave technologies for isolated direct gate drivers
By: Ueda, D.; Fukuda, T.; Negoro, N.; Nagai, S.; Sakai, H.; Otsuka, N.; Tanaka, T.; Ueda, T.;
2012 / IEEE / 978-1-4673-1780-1
Description
This item was taken from the IEEE Conference ' Drive-by-Microwave technologies for isolated direct gate drivers ' The wireless power transmission technology using an electro-magnetic resonant coupler (EMRC) has been applied to an isolated direct gate driver for GaN power switching devices. This direct gate driver with the Drive-by-Microwave technologies dose not needs an additional isolated voltage source and a photo-coupler because it can supply an isolated gate signal and signal power all together. The wireless power transmission capability in the driver is crucial for its performances, especially, regarding a switching speed and power consumption. This paper presents the potential of GaN/Sapphire direct gate driver using 5.8GHz wireless power transmission with a compact butterfly-shaped EMRC. Since the fabricated direct gate driver with the integrated EMRC drove a GaN power switching device with a fast turn on/off time, it is proved that the GaN/Sapphire HFETs is best suitable for the direct gate driver.
Related Topics
Wireless Power Transmission Technology
Electromagnetic Resonant Coupler
Isolated Gate Signal
Compact Butterfly-shaped Emrc
Fabricated Direct Gate Driver
Sapphire Hfet
Frequency 5.8 Ghz
Logic Gates
Radio Frequency
Switches
Gallium Nitride
Rectifiers
Wireless Communication
Power Transmission
Gallium Nitride (gan)
Gate Driver
Power Device
Electro-magnetic Resonant
Wireless Power Transmission
Microwave
Isolated Direct Gate Drivers
Drive-by-microwave Technologies
Gan
Inductive Power Transmission
Iii-v Semiconductors
Gallium Compounds
Driver Circuits
Wide Band Gap Semiconductors
Engineering
Power Switching Devices