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Conformal, low-damage shallow junction technology (Xj<5nm) with optimized contacts for FinFETs as a Solution Beyond 14nm Node
By: Snow, J.; Kang, C.Y.; Baek, R.H.; Hobbs, C.; Ang, K.-W.; Nunan, P.; Jammy, R.; Ok, I.; Kirsch, P.D.; Nadahara, S.;
2012 / IEEE / 978-1-4673-1257-8
This item was taken from the IEEE Conference ' Conformal, low-damage shallow junction technology (Xj<5nm) with optimized contacts for FinFETs as a Solution Beyond 14nm Node ' A new conformal and damage free doping technique (monolayer doping, MLD) has been demonstrated on FinFETs with good control of short channel effects down to a gate length of <40nm and 20nm of W
Covalently Bonded Dopants
Short Channel Control
Size 14 Nm
Size 40 Nm
Short Channel Effects
Damage Free Doping Technique
Conformal Low-damage Shallow Junction Technology
Size 20 Nm