Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Conformal, low-damage shallow junction technology (Xj<5nm) with optimized contacts for FinFETs as a Solution Beyond 14nm Node

By: Snow, J.; Kang, C.Y.; Baek, R.H.; Hobbs, C.; Ang, K.-W.; Nunan, P.; Jammy, R.; Ok, I.; Kirsch, P.D.; Nadahara, S.;

2012 / IEEE / 978-1-4673-1257-8

Description

This item was taken from the IEEE Conference ' Conformal, low-damage shallow junction technology (Xj<5nm) with optimized contacts for FinFETs as a Solution Beyond 14nm Node ' A new conformal and damage free doping technique (monolayer doping, MLD) has been demonstrated on FinFETs with good control of short channel effects down to a gate length of <40nm and 20nm of Wfin. Unlike conventional ion-implantation, this approach makes use of a dopant-containing precursor to uniformly assemble a monolayer of covalently bonded dopants to enable ultra-shallow junction (USJ) of <5nm, showing great potential for FinFET junction scaling. This low damage, conformal doping technique is promising to address key FinFET scaling issues: series resistance and short channel control for 14nm node and beyond. A sub-5nm junction depth with a steep junction abruptness has been successfully achieved on 300mm platform.