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Impact of substrate orientation on Ultra Thin BOX Fully Depleted SOI electrical performances

By: Cros, A.; Bourdelle, K.K.; Fenouillet-Beranger, C.; Ben Akkez, I.; Boeuf, F.; Ghibaudo, G.; Balestra, F.; Faynot, O.; Skotnicki, T.; Poiroux, T.; Nguyen, B.Y.; Perreau, P.; Gourvest, E.; Borowiak, C.; Margain, A.; Gouraud, P.; Beneyton, R.; Richard, C.; Abbate, F.; Pellissier-Tanon, D.; Andrieu, F.; Weber, O.; Haendler, S.;

2012 / IEEE / 978-1-4673-0192-3

Description

This item was taken from the IEEE Conference ' Impact of substrate orientation on Ultra Thin BOX Fully Depleted SOI electrical performances ' In this paper, we compare the electrical properties of Ultra Thin Buried Oxide (UTBOX) Fully Depleted Silicon On Insulator (FD-SOI) MOS devices for rotated and not rotated substrate with different gate lengths. We found a significant performance enhancement on FD-SOI PMOSFETs as expected, while keeping a good control of short channel effects. Surprisingly, to a lower extent, an improvement is also found for NMOS devices. We have also studied the carrier mobility degradation as a function of temperature and we point out the contribution of different mechanisms that reduce the mobility such as impurity Coulomb scattering, phonons and neutral defects as a function gate length. We find that there is no significant effect of rotated substrate on the mobility degradation. All these results are discussed and possible explanations are also given.