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The Hydrogenic Donor Impurity Binding Energy of Quantum Dot in the Presence of an Electric Field

By: Guangxin Wang; Wei Chen; Xiuzhi Duan;

2012 / IEEE / 978-0-7695-4647-6

Description

This item was taken from the IEEE Conference ' The Hydrogenic Donor Impurity Binding Energy of Quantum Dot in the Presence of an Electric Field ' Using variational approach in the effective mass approximation, the hydrogenic donor impurity binding energy is investigated in detail in cylindrical GaAs/Ga1-xAlxAs quantum dot in the presence of an electric field applied along the growth direction of the quantum dot (QD). The binding energy increases gradually, reaches a maximum value, and then decreases quickly to the special value as the QD radius decreases. The results that the impurity binding energies as functions of the applied electric field and the position of a donor impurity ion are also presented.