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New evaluation method of low-k dielectric films by using a gated PN-junction diode and a field MOS transistor
By: Ito, M.; Tamaki, Y.; Kawamoto, Y.; Hashino, M.;
2012 / IEEE / 978-1-4673-1030-7
This item was taken from the IEEE Conference ' New evaluation method of low-k dielectric films by using a gated PN-junction diode and a field MOS transistor ' We have developed a new test method for evaluating low-k materials. The method uses two kinds of new test structures. One is a modified gated pn-junction diode and the other is a modified field MOS transistor. Three kinds of low-k materials were evaluated by using the test structures, and electrical characteristics for these materials were successfully measured. The advantage of the new method was discussed.