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Experimentally based methodology for charge pumping bulk defect trapping correction

By: Campbell, J.P.; Southwick, R.G.; Ryan, J.T.; Suehle, J.S.; Young, C.D.; Cheung, K.P.;

2011 / IEEE / 978-1-4577-0115-3

Description

This item was taken from the IEEE Conference ' Experimentally based methodology for charge pumping bulk defect trapping correction ' We develop a simple experimental approach to remove bulk trap contributions from charge pumping data collected on devices which suffer from large amounts of bulk dielectric electron trapping. The approach is more desirable and easier to implement than other simulation/device modeling based approaches. We demonstrate the approach using HfO2 based MOSFETs. Additionally, we provide an explanation for the smaller than expected bulk trap contribution to charge pumping current.