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Advanced contact and junction technologies for improved parasitic resistance and short channel immunity in FinFETs beyond 22nm node
By: Ang, K.-W.; Jammy, R.; Kirsch, P.D.; Hobbs, C.; Gausepohl, S.; Gunji, M.; Franca, D.L.; Rodgers, M.; Ok, I.; Hung, P.Y.; Min, B.-G.;
2011 / IEEE / 978-1-4577-1756-7
This item was taken from the IEEE Conference ' Advanced contact and junction technologies for improved parasitic resistance and short channel immunity in FinFETs beyond 22nm node ' Advanced, fully depleted devices such as FinFET or Tri-Gate transistors are increasingly sought after to enable density and gate length (L
Active Dopant Concentration
Interface Dipole Engineering
In-situ Doping Technique
Interface Dipole Material
Contact Resistance Reduction
Schottky Barrier Height
Specific Contact Resistivity
Short Channel Immunity
Drive Current Performance