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A carbon nanotube gas sensor using CMOS-based platform
2011 / IEEE / 978-1-4244-9289-3
This item was taken from the IEEE Conference ' A carbon nanotube gas sensor using CMOS-based platform ' A complementary metal-oxide-semiconductor (CMOS)-based gas sensor platform using a commercially available 0.35 �m CMOS process and the microelectromechanical systems (MEMS) post process was developed in this work. An n-type polysilicon microheater with <2 k& and a metal thermometer with <1 k& were integrated within this platform to provide a temperature programming for sensing film preparations and sensor characterizations. After the standard CMOS process, a freestanding micro hotplate was fabricated via an isotropic silicon dry etching. The rapid thermal response (<1 s) and an uniform heating distribution (100�C, standard deviation of 1�C) of this sensor platform were demonstrated. The sensing material was prepared with the mixing of commercially available single-walled carbon nanotubes (SWCNTs) and an organic solvent. Our sensors were tested with three compounds (Octane, Butanol, and Butylacetate) and the good linearity and fast response time (<5 s) were demonstrated. The great sensor sensitivities of the three compounds were obtained (Octane: 0.329 ppm/ppm, Butanol: 0.522 ppm/ppm, and Butylacetate: 0.683 ppm/ppm) at a high concentration range (>1K ppm) and could be used to enhance the specificity of the SWCNTs-based gas sensor.
Carbon Nanotube Gas Sensor
N-type Polysilicon Microheater
Isotropic Silicon Dry Etching
Single-walled Carbon Nanotubes
Cmos Integrated Circuits