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High detectivity MWIR Type-II superlattice grown on a GaAs substrate
2011 / IEEE / 978-1-4244-8939-8
This item was taken from the IEEE Conference ' High detectivity MWIR Type-II superlattice grown on a GaAs substrate ' Specific detectivity values of 1.0�011, 2.8�09 and 5.8x108cmHz1/2/W were measured at 77, 200 and 290K, respectively, on a MWIR Type-II InAs/GaSb Superlattice photodiode grown on a GaAs substrate.
High Detectivity Mwir
Temperature 77 K
Temperature 200 K
Temperature 290 K