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Turn-off failure mechanism in large area IGCTs
2011 / IEEE / 978-1-61284-172-4
This item was taken from the IEEE Conference ' Turn-off failure mechanism in large area IGCTs ' The destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The three-dimensional nature of the turn-off process in a 91mm diameter wafer is simulated with a two-dimensional representation. Simulation results show that the final destruction is caused by the uneven dynamic avalanche current distribution across the wafer.
Integrated Circuit Modeling
Integrated Gate Commutated Turn-off Thyristor
Large Area Soa
Inductive Switching Conditions
Large Area Igct
Turn-off Failure Mechanism
Dynamic Avalanche Current Distribution
Integrated Gate Commutated Thyristors