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High mobility channel from the prospective of random telegraph noise

By: Oates, A.; Campbell, J.P.; Cheung, K.P.;

2011 / IEEE / 978-1-4577-0708-7

Description

This item was taken from the IEEE Conference ' High mobility channel from the prospective of random telegraph noise ' We experimentally verify for the first time that random telegraph noise (RTN) in ultra-scaled MOSFETs is related to the inversion charge density in the channel. We then examine the merit of high mobility channel devices from the RTN prospective. This analysis strongly suggests that RTN is a serious obstacle for high mobility channel adoption.