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Analysis of low-frequency noise in organic field-effect transistors combining static and noise data

By: Gwoziecki, R.; Tsukagoshi, K.; Minari, T.; Ghibaudo, G.; Coppard, R.; Balestra, F.; Xu, Y.; Chroboczek, J.A.;

2011 / IEEE / 978-1-4577-0192-4

Description

This item was taken from the IEEE Conference ' Analysis of low-frequency noise in organic field-effect transistors combining static and noise data ' A study of electrical properties of organic transistors combining static and noise data is presented. The DC data provide key parameters, such as mobility, contact resistance and the surface state density. The low-frequency noise analysis proves that the features observed in DC measurements, e.g. higher trap density, reflect poor crystal quality and thus are responsible for lower mobility and higher contact resistance. The mobility and contact resistance data provide a deep insight into the origin of the contact noise in organic transistors.