Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Characterization and passivation of band gap states in metal-oxide-semiconductor field effect transistors with polycrystalline silicon channel
By: Jun Suk Chang; Jungwoo Kim; Dong-Hyoub Kim; Tae-Young Jang; Hoichang Yang; Hyunsang Hwang; Rino Choi; Daeseok Lee; Jae Kyeong Jeong;
2011 / IEEE / 978-1-4577-0158-0
This item was taken from the IEEE Conference ' Characterization and passivation of band gap states in metal-oxide-semiconductor field effect transistors with polycrystalline silicon channel ' High density of states in energy bandgap causes low carrier mobility and poor reliability in devices with poly-Si channel. Trap state densities of poly-Si devices in grain boundary and at dielectric interface were evaluated using Meyer-Neldel rule and charge pumping method. It was found that H
Trap State Densities
Charge Pumping Method
Bandgap States Passivation
Semiconductor Device Reliability
Metal-oxide-semiconductor Field Effect Transistors