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High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application

By: Pey, K.L.; Fang, Z.; Wang, Z.R.; Wu, L.; Kang, J.F.; Gao, B.; Yeo, Y.C.; Yu, H.Y.; Li, M.F.; Tran, X.A.; Nguyen, B.Y.; Du, A.Y.;

2011 / IEEE / 978-1-4244-9949-6

Description

This item was taken from the IEEE Conference ' High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application ' We report a high performance unipolar RRAM with Ni-electrode/HfOx/AlOy/p+-Si structure, compatible with Si-diode selector for 3D cross-bar implementation. Highlights of the demonstrated RRAM include 1) a high on/off resistance ratio of <105; 2) <100% device yield on a 6-inch wafer; 3) excellent cycle-to-cycle and device-to-device uniformity of switching parameters (e.g. Vset, Vreset, and HRS/LRS currents); 4) satisfactory pulse switching endurance (> 106 cycles); 5) high temperature retention (>105 s @ 120 �C), and high temperature operating stability (> 200 �C) without threshold resistive switching; 6) a fast set/rest speed of <10/30 ns; 7) full CMOS compatible materials and process: with p+-Si bottom electrode, avoiding the use of noble metals, e.g. Pt.