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Critical discussion on (100) and (110) orientation dependent transport: nMOS planar and FinFET
By: Young, C.D.; Baykan, M.O.; Jammy, R.; Datta, S.; Kirsch, P.; Majhi, P.; Thompson, S.; Nishida, T.; Hussain, M.M.; Smith, C.E.; Taylor, W.; Ok, I.; Hobbs, C.; Akarvardar, K.; Madan, H.; Agrawal, A.;
2011 / IEEE / 978-1-4244-9949-6
This item was taken from the IEEE Conference ' Critical discussion on (100) and (110) orientation dependent transport: nMOS planar and FinFET ' Electron mobility on (100) and (110) planar FETs and SOI FinFETs was evaluated. It is experimentally demonstrated that the (110) sidewall of FinFETs does not present a drawback in terms of electron mobility - contrary to results obtained on (110) planar MOSFETs. This is comprehensively explained by a combination of first principles and empirical approach closely matching the experimental data.