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Plasma doping of silicon fin structures
By: Duchaine, J.; Etienne, H.; Barnett, J.; Hobbs, C.; Felch, S.; Rodgers, M.; Spiegel, Y.; Roux, L.; Torregrosa, F.; Bennett, S.;
2011 / IEEE / 978-1-61284-134-2
This item was taken from the IEEE Conference ' Plasma doping of silicon fin structures ' Plasma doping has been explored for many implant applications for over two decades and is now being used in semiconductor manufacturing for two applications: DRAM polysilicon counter-doping and contact doping. Recently it has become an attractive implant technique for multiple gate and FinFET devices, since the directionality of the conventional beam-line implant processes used to form the source and drain junctions in planar devices is not well suited for use on non-planar devices. In this paper, we investigate the use of plasma doping to dope the sidewalls of fins, with particular attention to the dopant uniformity and residual damage after anneal.
Dram Polysilicon Counter-doping
Dram Polysilicon Contact Doping
Beam-line Implant Processes
Silicon Fin Structures
Semiconductor Device Manufacture
Plasma Materials Processing