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Carrier dynamics in Al0.72Ga0.18N multiple quantum wells exhibiting varying internal quantum efficiencies

By: Bhattacharyya, A.; Wraback, M.; Hongen Shen; Rotella, P.; Garrett, G.A.; Hug, W.; Moustakas, T.D.;

2011 / IEEE / 978-1-55752-911-4

Description

This item was taken from the IEEE Conference ' Carrier dynamics in Al0.72Ga0.18N multiple quantum wells exhibiting varying internal quantum efficiencies ' Time-resolved photoluminescence studies of Mid-UV AlGaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy reveal improved internal quantum efficiencies with increased carrier localization related to chemical ordering.