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A new interface defect spectroscopy method

By: Suehle, J.S.; Campbell, J.P.; Wang, C.; Zhang, F.; Cheung, K.P.; Tilak, V.; Kopanski, J.J.; Han, J.H.; Yu, L.C.; Ryan, J.T.; Fronheiser, J.;

2011 / IEEE / 978-1-4244-8492-8


This item was taken from the IEEE Conference ' A new interface defect spectroscopy method ' A new interface defect spectroscopy method based on variable height charge pumping capable of observing the amphoteric nature of Si/SiO2 interface states in production quality sub-micron devices is demonstrated. It can help to resolve the long standing debate about the true nature of interface states.