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Post Si CMOS graphene nanoelectronics

By: Chun-Yung Sung;

2011 / IEEE / 978-1-4244-8492-8

Description

This item was taken from the IEEE Conference ' Post Si CMOS graphene nanoelectronics ' IBM graphene FETs (GFET) yield the highest cut-off frequency (fT) values reported: >200 GHz on epitaxially grown SiC wafer and >150 GHz1 on CVD-grown-transferred onto Si wafer which are well above Si MOSFET fT-Lg trend in ITRS2. A novel reconfigurable graphene p-n junction based logic device is also introduced. Its switching is accomplished by using co-planar split gates that modulate the properties that are unique to graphene including angular dependent carrier reflection which can dynamically change the device operation, leading to reconfigurable multi-functional logic.