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New methods for the direct extraction of mobility and series resistance from a single ultra-scaled device

By: Cheung, K.P.; Campbell, J.P.; Oates, A.; Sheng, K.; Suehle, J.S.; Yu, L.C.;

2010 / IEEE / 978-1-4244-5450-1

Description

This item was taken from the IEEE Conference ' New methods for the direct extraction of mobility and series resistance from a single ultra-scaled device ' In summary, we have presented a novel wafer-level Hall mobility (�H) measurement methodology which can be implemented in any conventional wafer prober (no specialized equipment needed). In addition, we demonstrated a simple RSD extraction scheme with verifiable accuracy. Both techniques work directly on a single ultra-scaled MOSFET, providing an elegant solution to two very difficult but important measurements. The authors acknowledge the Office of Microelectronic Programs at NIST for financial support.