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Minimization of threshold voltage variation to AVT=1.3mV�m in bulk high-k/metal gated devices by dopant-diffusion control using integrated FSP-FLA technology

By: Ikeda, K.; Onizawa, T.; Aoyama, T.; Kato, S.; Ohji, Y.;

2010 / IEEE / 978-1-4244-5450-1

Description

This item was taken from the IEEE Conference ' Minimization of threshold voltage variation to AVT=1.3mV�m in bulk high-k/metal gated devices by dopant-diffusion control using integrated FSP-FLA technology ' We have successfully suppressed threshold voltage variations due to pattern effect problems and random dopant fluctuation (RDF) using an integrated FSP-FLA technology. The serious problem of the pattern effect in FLA can be solved by using a light-absorber carbon film process, together with FSP-FLA. We estimated the temperature range in our test chip was within 10�C, being the same level obtained with spike RTA. In addition, the diffusion-less feature of FLA reduces the RDF of NMOS down to the same level as with PMOS. By applying several optimized processes, including a high-k/metal gate stack, we achieved AVT as 1.3mV�m for NMOS and 1.2mV�m for PMOS.