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Pre-existing and process induced defects in high-k gate dielectrics

By: Sekiguchi, T.; Jun Chen; Sato, M.; Ohji, Y.; Ikeda, K.; Yugami, J.; Chikyow, T.;

2010 / IEEE / 978-1-4244-5775-5

Description

This item was taken from the IEEE Conference ' Pre-existing and process induced defects in high-k gate dielectrics