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Dual-band CMOS transceiver with highly integrated front-end for 450Mb/s 802.11n systems
By: Gross, S.; Degani, O.; Cossoy, F.; Ruberto, M.; Normatov, G.; Rivkind, A.; Telzhensky, N.; Banin, R.; Ashckenazi, O.; Ben-Bassat, A.; Zaguri, S.; Hara, G.; Zajac, M.; Shahar, N.; Shahaf, S.; Yousef, H.; Mor, E.; Eilat, Y.; Nazimov, A.; Beer, Z.; Fridman, A.; Maimon, T.;
2010 / IEEE / 978-1-4244-6243-8
This item was taken from the IEEE Conference ' Dual-band CMOS transceiver with highly integrated front-end for 450Mb/s 802.11n systems ' A 3-stream, 802.11n WLAN MIMO transceiver, with fully integrated PAs and LNAs in both 2.4GHz and 5GHz bands, and a T/R switch in the 2.4GHz band, was implemented in a standard 90nm CMOS technology. The transmitter achieves an EVM of -28dB at output power of 19dBm and 17dBm in the 2.4GHz and 5GHz bands, respectively. The transmitter power consumption per Mb of data, in 3-stream mode, is 3.7mW/Mb and 4.5mW/Mb in the 2.4GHz and 5GHz, respectively. This is four times lower comparing to the single stream (SISO) mode. The receiver NF is 4dB in both bands, and power consumption is 1.6mW/Mb and 1.7mW/Mb, in the 2.4GHz and 5GHz bands, respectively.
Cmos Integrated Circuits
Low Noise Amplifiers
Radiofrequency Integrated Circuits
Size 90 Nm
Dual-band Cmos Transceiver
Highly Integrated Front-end
802.11n Wlan Mimo Transceiver
Fully Integrated Pa
Low Noise Amplifier
Frequency 2.4 Ghz
Frequency 5 Ghz
Integrated T/r Switch