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Development of graphene FETs for high frequency electronics
By: Farmer, D.; Jenkins, K.; Yu-Ming Lin; Ek, B.; Valdes-Garcia, A.; Hsin-Ying Chiu; Chun-Yung Sung; Avouris, P.;
2009 / IEEE / 978-1-4244-5641-3
Description
This item was taken from the IEEE Conference ' Development of graphene FETs for high frequency electronics ' Recent advances in fabricating, measuring, and modeling of top-gated graphene FETs for high-frequency electronics are reviewed. By improving the oxide deposition process and reducing series resistance, an intrinsic cut-off frequency as high as 50 GHz is achieved in a 350-nm-gate graphene FET at a drain bias of 0.8 V. This f
Related Topics
Voltage 0.8 V
Fets
Frequency Measurement
Cutoff Frequency
Current Measurement
Electrical Resistance Measurement
Mosfets
Gain Measurement
Circuit Synthesis
Silicon Carbide
Density Measurement
Field Effect Transistor
Graphene Transistor
Intrinsic Cut Off Frequency
Oxide Deposition Process
Top Gated Graphene Fet
High Frequency Electronics
Size 350 Nm
Field Effect Transistors
Engineering
Series Resistance