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A novel damage-free high-k etch technique using neutral beam-assisted atomic layer etching (NBALE) for sub-32nm technology node low power metal gate/high-k dielectric CMOSFETs
By: Park, J.B.; Park, B.J.; Min, K.S.; Park, C.S.; Park, C.; Kang, C.Y.; Hussain, M.M.; Yeom, G.Y.; Jammy, R.; Tseng, H.-H.; Kirsch, P.; Lee, B.H.; Lee, J.C.;
2009 / IEEE / 978-1-4244-5641-3
This item was taken from the IEEE Conference ' A novel damage-free high-k etch technique using neutral beam-assisted atomic layer etching (NBALE) for sub-32nm technology node low power metal gate/high-k dielectric CMOSFETs ' For the first time, a novel damage-free neutral beam-assisted atomic etching process has successfully demonstrated the removal of the residual high-k dielectric layer after gate patterning. Due to its neutralized atomic flux and chemical reaction, high etch selectivity is observed to improve device performance and reliability. This process should significantly enhance high-k/metal gate manufacturability.
Materials Science And Technology
Atomic Layer Deposition
High K Dielectric Materials
High-k Gate Dielectrics
Neutralized Atomic Flux
Low Power Metal Gate-high-k Dielectric Cmosfet
Neutral Beam Assisted Atomic Layer Etching
Damage Free High-k Etch Technique
Cmos Integrated Circuits
Plasma Beam Injection Heating