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Band-gap engineered hot carrier tunnel transistors

By: Mookerjea, S.; Datta, S.;

2009 / IEEE / 978-1-4244-3527-2

Description

This item was taken from the IEEE Conference ' Band-gap engineered hot carrier tunnel transistors ' Inter-band tunnel field effect transistors (TFETs) with a gate co ntrolled zener tunnel junction at the source are of interest because of its a bility to operate with sub-kT/q sub-t hreshold sl ope device ope ration over a specified gate bias range [1,2]. This allows TFETs to achieve, in principle, much higher ION-IOFF ratio over a given gate voltage swing compared to conventional MOSFETs, making them attractive for ultra-low power operation. We present here a study on the strong non-equilibrium character of the tunnel injected carrier population in the channel of the TFETs through detailed energy balance (EB) simulations [3,4] and its implication on TFET device design. We specifically show the following: (i) A large and highly inhomogeneous electric field at the source side tunnel junction at high gate voltages results in a non-equilibrium distribution of injected carriers in the TFET channel (ii) A novel source side heterojunction design en hances and sharpens t he source side electric field am plitude and shape resulting in greater carrier heating and band-to-band tunneling (BTBT) currents even at moderate gate voltages (iii) The energy relaxation p rocess o f t he injected carriers on both sides of t he tunnel barrier a re studied as a function of bias conditions and is a strong function of the 2-dimensional electric field profile in the TFET channel.