Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Band-gap engineered hot carrier tunnel transistors

By: Mookerjea, S.; Datta, S.;

2009 / IEEE / 978-1-4244-3527-2


This item was taken from the IEEE Conference ' Band-gap engineered hot carrier tunnel transistors ' Inter-band tunnel field effect transistors (TFETs) with a gate co ntrolled zener tunnel junction at the source are of interest because of its a bility to operate with sub-kT/q sub-t hreshold sl ope device ope ration over a specified gate bias range [1,2]. This allows TFETs to achieve, in principle, much higher ION-IOFF ratio over a given gate voltage swing compared to conventional MOSFETs, making them attractive for ultra-low power operation. We present here a study on the strong non-equilibrium character of the tunnel injected carrier population in the channel of the TFETs through detailed energy balance (EB) simulations [3,4] and its implication on TFET device design. We specifically show the following: (i) A large and highly inhomogeneous electric field at the source side tunnel junction at high gate voltages results in a non-equilibrium distribution of injected carriers in the TFET channel (ii) A novel source side heterojunction design en hances and sharpens t he source side electric field am plitude and shape resulting in greater carrier heating and band-to-band tunneling (BTBT) currents even at moderate gate voltages (iii) The energy relaxation p rocess o f t he injected carriers on both sides of t he tunnel barrier a re studied as a function of bias conditions and is a strong function of the 2-dimensional electric field profile in the TFET channel.