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IGCTs: High-Power Technology for power electronics applications
By: Scheinert, M.; Wikstrom, T.; Nistor, I.;
2009 / IEEE / 978-1-4244-4413-7
This item was taken from the IEEE Conference ' IGCTs: High-Power Technology for power electronics applications ' This paper focuses on the most recent technical developments in Integrated Gate Commutated Thyristors. Improved Safe Operating Area (SOA) of a new IGCT chip set based on ABB's High Power Technology (HPT) platform with a rated voltage of 10kV is presented. A matching 10kV freewheeling diode is also reported. Combined, these developments open the door to new applications of silicon IGCTs reaching voltage levels of 7.2kV RMS or more.
Power Electronics Applications
Integrated Gate Commutated Thyristors
Safe Operating Area
Abb High Power Technology
Voltage 10 Kv
Semiconductor Optical Amplifiers
Power Semiconductor Switches
Integrated Gate Controlled Thyristor
Hybrid Circuit Breaker
Medium Voltage Drive
Voltage 7.2 Kv