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IGCTs: High-Power Technology for power electronics applications

By: Scheinert, M.; Wikstrom, T.; Nistor, I.;

2009 / IEEE / 978-1-4244-4413-7

Description

This item was taken from the IEEE Conference ' IGCTs: High-Power Technology for power electronics applications ' This paper focuses on the most recent technical developments in Integrated Gate Commutated Thyristors. Improved Safe Operating Area (SOA) of a new IGCT chip set based on ABB's High Power Technology (HPT) platform with a rated voltage of 10kV is presented. A matching 10kV freewheeling diode is also reported. Combined, these developments open the door to new applications of silicon IGCTs reaching voltage levels of 7.2kV RMS or more.