Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Light switched Plasma Charging Damage protection device allowing high field characterization
By: Paschen, U.; Sommer, S.P.; Vogt, H.; Figge, M.;
2009 / IEEE / 978-1-4244-4351-2
This item was taken from the IEEE Conference ' Light switched Plasma Charging Damage protection device allowing high field characterization ' One of the main problems in Plasma Charging Damage (PCD) measurement is the need to reference the measured damage to a zero level. Especially when the reference device is small it can not be created damage free without a protective device parallel to the gate. Normally such a device does not allow destructive measurement involving high fields and both polarities. This paper describes a structure, which is capable of protecting a device from PCD, but at the same time allows bipolar high-field diagnostic stress after the end of the process. Its usefulness is demonstrated on a realistic PCD test structure.
Semiconductor Device Measurement
Semiconductor Device Reliability
Light Switched Pcd Protection Device
Plasma Charging Damage Destructive Measurement
Bipolar High-field Diagnostic Stress
Realistic Pcd Test Structure
Semiconductor Device Testing
High Field Characterization