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Engineering silicon-on-insulator (SOI) substrates for hybrid orientation technologies (HOT)

By: Signamarcheix, T.; Clavelier, L.; Ghyselen, B.; Nolot, E.; Papon, A.-M.; Biasse, B.;

2009 / IEEE / 978-1-4244-4256-0

Description

This item was taken from the IEEE Conference ' Engineering silicon-on-insulator (SOI) substrates for hybrid orientation technologies (HOT) ' Deep amorphization of SOI substrate that preserves a crystalline surface layer was demonstrated on (110) and (100) oriented SOI films. The crystalline integrity of the surface layer allowed it to be a template for solid phase epitaxy. At an optimized temperature, pseudo-MOSFET measurements indicate a complete recovery of the electronic properties. However, a small increase is observed for the density of interface states. These results demonstrate the feasibility of this approach to form hybrid (100)/(110) SOI films that would allow increasing the hole mobility.