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Engineering silicon-on-insulator (SOI) substrates for hybrid orientation technologies (HOT)
2009 / IEEE / 978-1-4244-4256-0
This item was taken from the IEEE Conference ' Engineering silicon-on-insulator (SOI) substrates for hybrid orientation technologies (HOT) ' Deep amorphization of SOI substrate that preserves a crystalline surface layer was demonstrated on (110) and (100) oriented SOI films. The crystalline integrity of the surface layer allowed it to be a template for solid phase epitaxy. At an optimized temperature, pseudo-MOSFET measurements indicate a complete recovery of the electronic properties. However, a small increase is observed for the density of interface states. These results demonstrate the feasibility of this approach to form hybrid (100)/(110) SOI films that would allow increasing the hole mobility.
Solid Phase Epitaxial Growth
Hybrid Orientation Technology
(110) Oriented Soi Films
(100) Oriented Soi Films
Solid Phase Epitaxy
Silicon On Insulator Technology
Electronic Density Of States
Crystalline Surface Layer