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Monolithically integrated carbon nanotube bundle field emitters using a double-SOI process
By: Lin, R.; Luong, E.M.; Toda, R.; Manohara, H.M.; Liao, A.;
2009 / IEEE / 978-1-4244-4190-7
This item was taken from the IEEE Conference ' Monolithically integrated carbon nanotube bundle field emitters using a double-SOI process ' Carbon nanotube (CNT) field emitters offer high energy efficiency and high current density needed for miniature analytical instruments for space exploration. This paper reports design and fabrication of monolithically gate-integrated carbon nanotube bundle field electron emitters using double silicon-on-insulator (SOI) substrates. While gate integration with CNT field emitters has been reported before, this process and its extension (as in manylayered- SOI substrates) allow monolithic integration of multiple electrodes for electron beam shaping to produce a highly compact field emission electron gun. In addition, this process offers improved dimensional precision, and can be used to integrate gates with single CNT bundle or with an array as needed for an application.
Field Emitter Arrays
Field Emission Electron Gun
Field Electron Emitters
Electron Beam Shaping
Silicon On Insulator Technology
Monolithic Integrated Circuits
Cnt Field Emitters