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The negative bias temperature instability vs. high-field stress paradigm

By: Cheung, K.P.; Campbell, J.P.; Oates, A.S.; Suehle, J.S.;

2009 / IEEE / 978-1-4244-2933-2

Description

This item was taken from the IEEE Conference ' The negative bias temperature instability vs. high-field stress paradigm ' A new and more accurate fast-IDVG measurement methodology is utilized to examine the transient degradation and recovery associated with the negative-bias temperature instability (NBTI). The results reveal that the anomalously large initial degradations reported in the recent literature are actually due to high-field stress acceleration and are not representative of low-field NBTI phenomena. Our observations at these higher fields reveal the presence of an, as yet unaccounted for, electron trapping/de-trapping component. The electron trapping is a signature of high-field stress degradation. While this high-field stress acceleration is unavoidable, care must be taken to account for this component in NBTI analysis. Collectively, our observations indicate that this high-field stress component is present and unaccounted for in a large portion of the recent NBTI literature.