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Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs

By: Yu, L.C.; Campbell, J.P.; Sheng, K.; Oates, A.; Suehle, J.S.; Qin, J.; Cheung, K.P.;

2009 / IEEE / 978-1-4244-2933-2

Description

This item was taken from the IEEE Conference ' Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs ' We utilize low-frequency noise measurements to examine the sub-threshold voltage (sub-VTH) operation of highly scaled devices. We find that the sub-VTH low-frequency noise is dominated by random telegraph noise (RTN). The RTN is exacerbated both by channel dimension scaling and reducing the gate overdrive into the sub-VTH regime. These large RTN fluctuations greatly impact circuit variability and represent a troubling obstacle that must be solved if sub-VTH operation is to become a viable solution for low-power applications.