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High-�/metal gate low power bulk technology - Performance evaluation of standard CMOS logic circuits, microprocessor critical path replicas, and SRAM for 45nm and beyond
By: Park, D.-G.; Stein, K.; Khare, M.; Divakaruni, R.; Steegen, A.; Lindsay, R.; Sherony, M.; Narayanan, V.; Samavedam, S.; Theon, V.-Y.; Chudzik, M.; Schepis, D.; Haetty, J.; Chowdhury, M.; Kanarsky, T.; Yan, W.; Chen, J.; Zhuang, H.; Jaeger, D.; Chen, X.; Loesing, R.; Tang, T.; Hatzistergos, M.; Moumen, N.; von Arnim, K.; Han, S.; Schruefer, K.; Lee, Y.; Han, J.-P.; Li, W.; Yin, H.; Pacha, C.; Kim, N.; Ostermayr, M.; Eller, M.; Kim, S.; Kim, K.;
2009 / IEEE / 978-1-4244-2784-0
This item was taken from the IEEE Conference ' High-�/metal gate low power bulk technology - Performance evaluation of standard CMOS logic circuits, microprocessor critical path replicas, and SRAM for 45nm and beyond ' This paper presents performance evaluation of high-�/metal gate (HK/MG) process on an industry standard 45nm low power microprocessor built on bulk substrate. CMOS devices built with HK/MG demonstrate 50% improvement in NFET and 65% improvement in PFET drive current when compared with industry standard 45nm Poly/SiON devices. No additional stress elements were used for this performance gain. The critical path circuits of this low power microprocessor built with HK/MG show dynamic performance gain over 50% at same supply voltage and 36% lower dynamic energy at same performance. Superior SRAM minimum operating voltage characteristics are achieved due to Vt variability reduction from HK/MG. Analog circuit functionality is demonstrated by a fully integrated PLL circuitry without any modification to process.
Microprocessor Critical Path Replicas
Standard Cmos Logic Circuits
Field Effect Transistor Circuits
Cmos Logic Circuits
Electricity Supply Industry
Random Access Memory
Cmos Logic Circuits
Size 45 Nm
Pfet Drive Current
Nfet Drive Current