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Reliability assessment of low |Vt| metal high-� gate stacks for high performance applications

By: Jammy, R.; Tseng, H.-H.; Kirsch, P.; Park, C.S.; Young, C.D.; Kang, C.Y.; Khanal, P.; Bersuker, G.; Huang, J.;

2009 / IEEE / 978-1-4244-2784-0

Description

This item was taken from the IEEE Conference ' Reliability assessment of low |Vt| metal high-� gate stacks for high performance applications ' SILC analysis is a powerful tool for the assessment of breakdown characteristics of high-� devices. By applying the SILC analysis during high field stress, we determined that the degradation mechanism for LaOx capped devices was drastically different as compared to the conventional Hf-based gate stacks. The La atoms diffused into the interfacial layer disrupting the SiO2 structure which may affect the reliability of the La-doped stacks. On the other hand, similar analysis applied to the stacks with the Ru-Al bi-layer gate electrode demonstrated that the Al-contained stacks were similar to that of the baseline samples indicating that Al atoms, which preferentially substitute for Si in SiO2, did not generate defects contributing to SILC.