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Reliability assessment of low |V
t| metal high-� gate stacks for high performance applications
By: Jammy, R.; Tseng, H.-H.; Kirsch, P.; Park, C.S.; Young, C.D.; Kang, C.Y.; Khanal, P.; Bersuker, G.; Huang, J.;
2009 / IEEE / 978-1-4244-2784-0
This item was taken from the IEEE Conference ' Reliability assessment of low |V
Low |vt| Metal High-kappa Gate Stacks
Stress-induced Leakage Current Analysis
High Field Stress
Laox Capped Devices
Ru-al Bi-layer Gate Electrode
Semiconductor Device Reliability
High-k Dielectric Thin Films