Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Extending spectroscopic ellipsometry for identification of electrically active defects in Si/SiO2/high-k/metal gate stacks

By: Price, J.; Tseng, H.-H.; Lysaght, P.S.; Bersuker, G.;

2009 / IEEE / 978-1-4244-2784-0

Description

This item was taken from the IEEE Conference ' Extending spectroscopic ellipsometry for identification of electrically active defects in Si/SiO2/high-k/metal gate stacks ' This paper presents a new method utilizing spectroscopic ellipsometry (SE) to non-invasively identify the oxygen vacancy defects located in the bottom interfacial SiO2 layer (BIF) of the scaled high-k/ metal gate stacks. Discrete absorption features within the bandgap of the SiO2 BIF are identified, and their relation to both intrinsic and process-induced defects is proposed. Sensitivity to changes in these defects with different process conditions is demonstrated, along with evidence suggesting that these same defects may contribute to the mechanism associated with the Vfb roll-off phenomenon.