Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Extending spectroscopic ellipsometry for identification of electrically active defects in Si/SiO
2/high-k/metal gate stacks
2009 / IEEE / 978-1-4244-2784-0
This item was taken from the IEEE Conference ' Extending spectroscopic ellipsometry for identification of electrically active defects in Si/SiO
High-k Dielectric Thin Films
Bottom Interfacial Layer
High-k-metal Gate Stacks
Discrete Absorption Features
Channel Bank Filters
High K Dielectric Materials
High-k Gate Dielectrics
Defect Absorption Spectra
Oxygen Vacancy Defects