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Full 3D string-level simulation of NAND flash device

By: Ohkura, Y.; Nakamura, M.; Kwon, U.-H.; Ohji, Y.; Ishikawa, H.;

2008 / IEEE / 978-1-4244-1753-7


This item was taken from the IEEE Conference ' Full 3D string-level simulation of NAND flash device ' We present results of full 3D sting-level process and device simulation for a typical 60nm NAND flash device, whose read/program/erase characteristics are successfully simulated using the quasi-steady state simulation method. Self boosting and local-self boosting phenomena are also successfully simulated in string-level applying realistic pulse waves to the entire wordlines and string select line in a fully transient manner. The comparison between the simulation results and the experiments in various bias conditions shows the capability of our simulation methodology for the design optimization of NAND flash device in string level.