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Phase modulator with InGaAs/InAlAs FACQW grown by MOVPE
By: Tada, K.; Simizu, H.; Tanemura, T.; Arakawa, T.; Nakano, Y.; Sawai, Y.; Hasegawa, R.; Amemiya, T.;
2008 / IEEE / 978-0-85825-807-5
This item was taken from the IEEE Conference ' Phase modulator with InGaAs/InAlAs FACQW grown by MOVPE ' The optical properties of InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) grown by MOVPE are investigated. The FACQW phase modulator is fabricated and its large phase shift is successfully observed.
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