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Plasma induced damage of aggressively scaled gate dielectric (EOT j 1.0nm) in metal gate/high-k dielectric CMOSFETs

By: Dawei Heh; Young, C.D.; Sung Woo Kim; Byoung Jae Park; Ook Sang Yoo; Bersuker, G.; Kyung Seok Min; Geun Young Yeom; Chang Yong Kang; Byoung Hun Lee;

2008 / IEEE / 978-1-4244-2049-0

Description

This item was taken from the IEEE Conference ' Plasma induced damage of aggressively scaled gate dielectric (EOT j 1.0nm) in metal gate/high-k dielectric CMOSFETs '