Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

An IGCT chip set for 7.2 kV (RMS) VSI application

By: Wikstrom, T.; Scheinert, M.; Nistor, I.; Luscher, M.;

2008 / IEEE / 978-1-4244-1532-8

Description

This item was taken from the IEEE Conference ' An IGCT chip set for 7.2 kV (RMS) VSI application ' In this paper we present a novel Integrated Gate-Commutated Thyristor (IGCT) for application in medium voltage drives at voltage levels of 7.2kV RMS or more. Measurements of over 11kV blocking-, on-state- and expanded SOA switching behavior are the basis for a detailed description of the performance. The new design features a planar junction termination, in combination with a corrugated p-base. These design concepts provide acceptable turn-on properties and improve turn-off Safe Operating Area (SOA) simultaneously. Improved diode soft reverse recovery at low currents is demonstrated using a combination of deep buffers and the Field Charge Extraction (FCE) concept.