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An IGCT chip set for 7.2 kV (RMS) VSI application
2008 / IEEE / 978-1-4244-1532-8
This item was taken from the IEEE Conference ' An IGCT chip set for 7.2 kV (RMS) VSI application ' In this paper we present a novel Integrated Gate-Commutated Thyristor (IGCT) for application in medium voltage drives at voltage levels of 7.2kV RMS or more. Measurements of over 11kV blocking-, on-state- and expanded SOA switching behavior are the basis for a detailed description of the performance. The new design features a planar junction termination, in combination with a corrugated p-base. These design concepts provide acceptable turn-on properties and improve turn-off Safe Operating Area (SOA) simultaneously. Improved diode soft reverse recovery at low currents is demonstrated using a combination of deep buffers and the Field Charge Extraction (FCE) concept.
Igct Chip Set
Integrated Gate-commutated Thyristor
Medium Voltage Drives
Soa Switching Behavior
Safe Operating Area
Soft Reverse Recovery
Semiconductor Optical Amplifiers
Power Semiconductor Devices
Application Specific Integrated Circuits
Semiconductor Device Measurement
Field Charge Extraction
Planar Junction Termination