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An IGCT chip set for 7.2 kV (RMS) VSI application

By: Wikstrom, T.; Scheinert, M.; Nistor, I.; Luscher, M.;

2008 / IEEE / 978-1-4244-1532-8


This item was taken from the IEEE Conference ' An IGCT chip set for 7.2 kV (RMS) VSI application ' In this paper we present a novel Integrated Gate-Commutated Thyristor (IGCT) for application in medium voltage drives at voltage levels of 7.2kV RMS or more. Measurements of over 11kV blocking-, on-state- and expanded SOA switching behavior are the basis for a detailed description of the performance. The new design features a planar junction termination, in combination with a corrugated p-base. These design concepts provide acceptable turn-on properties and improve turn-off Safe Operating Area (SOA) simultaneously. Improved diode soft reverse recovery at low currents is demonstrated using a combination of deep buffers and the Field Charge Extraction (FCE) concept.