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Ultra shallow junctions fabrication by Plasma Immersion Implantation on PULSION� followed by different annealing processes

By: Roux, L.; Fazzini, P.F.; Cristiano, F.; Delaporte, P.; Sempere, G.; Torregrosa, F.; Vervisch, V.; Etienne, H.; Sarnet, T.;

2008 / IEEE / 978-1-4244-1737-7

Description

This item was taken from the IEEE Conference ' Ultra shallow junctions fabrication by Plasma Immersion Implantation on PULSION� followed by different annealing processes ' To achieve the requirements of ITRS nodes j 45nm, beamline implantation is now limited in terms of low energies. Plasma Immersion Ion Implantation (PIII) is thus an alternative doping technique for the formation of ultra shallow junctions for Source/Drain Extension in silicon devices. In this study, we present some results obtained on the PIII prototype designed by the French company IBS: PULSION�.