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Achieving Low Vt (j-0.3V) and Thin EOT (~1.0nm) in Gate First Metal/High-k pMOSFET for High Performance CMOS Applications

By: Burham, C.; Park, H.B.; Song, S.C.; Bersuker, G.; Park, S.; Ju, B.S.; Lee, B.H.; Jammy, R.; Kirsch, P.; Park, C.;

2008 / IEEE / 978-1-4244-1614-1

Description

This item was taken from the IEEE Conference ' Achieving Low Vt (j-0.3V) and Thin EOT (~1.0nm) in Gate First Metal/High-k pMOSFET for High Performance CMOS Applications ' A metal/high-k gate stack with P-type band edge effective work function (EWF) of 5.1~5.2 eV is achieved through optimization of a Ru-Al based metal electrode. The critical factors controlling the high EWF values are found to be Al incorporation at the high-k/SiO2 interface and stabilization of the conductive RuO2 layer at the electrode/high-k interface. A pMOSFET with a fully optimized RuAl metal electrode system demonstrates a long channel Vt of -0.29 V with EOT= 1.05nm.