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New defect generation in nitrogen contained nMOS high-k devices

By: Kirsch, P.D.; Dawei Heh; Bersuker, G.; Chang Yong Kang; Young, C.D.;

2007 / IEEE / 978-1-4244-1771-9

Description

This item was taken from the IEEE Conference ' New defect generation in nitrogen contained nMOS high-k devices ' Hole trap generation during positive bias temperature instability (PBTI) stress in nMOS high-k transistors is reported. It is suggested that the generation of these hole traps is associated with nitrogen species that mighty be incorporated in the gate stack through processes that contain nitrogen.