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Thermal Performance Analysis for Packaging Configuration Design of Multifinger GaInP Collector-Up HBTs as Small High-Power Amplifiers

By: Tseng, H.C.; Chou, J.H.; Lee, P.H.;

2007 / IEEE / 978-1-4244-1391-1

Description

This item was taken from the IEEE Conference ' Thermal Performance Analysis for Packaging Configuration Design of Multifinger GaInP Collector-Up HBTs as Small High-Power Amplifiers ' A finite-element modeling (FEM) methodology is utilized to investigate the thermal performance of GaInP collector-up heterojunction bipolar transistors (C-up HBTs) with thermalvia packaging configurations. The thermal interaction between HBT fingers has been examined based on the temperature distribution phenomena in multifinger C-up HBTs. The results obtained from the C-up HBT with a three-finger structure indicate that the thickness of thermal-via configuration can be further reduced by 33% without deteriorating the thermal performance. From this analysis, it is demonstrated that thinning the thermal-via packaging design should be an effective approach for miniaturization of C-up HBTs as high-power amplifiers in cellular-phone communication systems.