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Manufacture and characteristics analysis of SOI-LDMOSFET
By: Lin, J.L.; Lin, C.I.; Chu, J.H.; Chen, H.J.;
2007 / IEEE / 978-1-4244-1271-6
This item was taken from the IEEE Conference ' Manufacture and characteristics analysis of SOI-LDMOSFET ' A LDMOSEFT structure on SOI substrate is studied mainly in this paper. This device has good performance in terms of low leakage current, low parasitic capacitance, low conduction power consumption and high switch speed. In this research, current-voltage relationship derivation and electrical characteristics, such as threshold voltage, breakdown voltage, on-resistance, parasitic capacitances, switching characteristics and AC reliability test are presented and discussed.
Semiconductor Device Reliability
Low Leakage Current
Low Parasitic Capacitance
Current-voltage Relationship Derivation
Integrated Circuit Modeling
Silicon On Insulator Technology
Low Conduction Power Consumption