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Manufacture and characteristics analysis of SOI-LDMOSFET

By: Lin, J.L.; Lin, C.I.; Chu, J.H.; Chen, H.J.;

2007 / IEEE / 978-1-4244-1271-6


This item was taken from the IEEE Conference ' Manufacture and characteristics analysis of SOI-LDMOSFET ' A LDMOSEFT structure on SOI substrate is studied mainly in this paper. This device has good performance in terms of low leakage current, low parasitic capacitance, low conduction power consumption and high switch speed. In this research, current-voltage relationship derivation and electrical characteristics, such as threshold voltage, breakdown voltage, on-resistance, parasitic capacitances, switching characteristics and AC reliability test are presented and discussed.