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Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention

By: Hanzawa, S.; Kotabe, A.; Matsui, Y.; Fuiisaki, Y.; Matsuzaki, N.; Kinoshita, M.; Kurotsuchi, K.; Morikawa, T.; Takaura, N.; Koga, T.; Moniwa, M.; Nitta, F.; Matsuoka, M.; Iwasaki, T.; Moriya, H.; Terao, M.;

2007 / IEEE / 978-1-4244-1507-6

Description

This item was taken from the IEEE Conference ' Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention ' We have fabricated a phase change memory using doped In-Ge-Te to improve the data retention required for industrial and automotive use. This chalcogenide features higher thermal stability as well as denser texture and improved adhesion. The memory cell using doped In-Ge-Te provided a larger read margin and better data retention than conventional Ge2Sb2Te5, and we demonstrated 10-year retention at temperatures above 150°C, which is the highest temperature ever reported.