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Type II Strain Layer Superlattices (SLS's) grown on GaAs Substrates

By: Dawson, L.R.; Balakrishnan, G.; Plis, E.; Rodriguez, J.B.; Huffaker, D.L.; Bishop, G.; Sharma, Y.D.; Kim, H.S.; Krishna, S.;

2007 / IEEE / 978-1-4244-0924-2

Description

This item was taken from the IEEE Conference ' Type II Strain Layer Superlattices (SLS's) grown on GaAs Substrates ' We report on type-II SLS's photodiodes grown on GaAs. The GaSb buffer was grown using a novel interfacial-misfit-approach, which relieves the strain though 900 misfit dislocations. The dark-current, quantum-efficiency and detectivity were measured.